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Journal of Environmental Biology

pISSN: 0254-8704 ; eISSN: 2394-0379 ; CODEN: JEBIDP

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        Abstract - Issue May 2010, 31 (3)                                                                                                             Back


Response in germination and seedling growth in Phaseolus mungo

under salt and drought stress


Gunjan Garg*


School of Biotechnology, Gautam Buddha University, Gautam Buddha Nagar, Greater Noida (NCR) - 201 308, India

(Received: October 21, 2008; Revised received: February 17, 2009; Accepted: March 02, 2009)


Abstract: The effect of salt and drought stress at the water potentials of -2, -4,-6 and -8 bars induced by NaCl and PEG 6000 (Polyethylene glycol 6000) each, on germination and early seedling growth, were investigated for two varieties (PU-19 and Type-9). Electrical conductivity (EC) value of the NaCl solutions were 4.5, 8.8, 12.7 and 16.3 dS m-1. Germination percentage, root and shoot length, and seedling fresh and dry weight were measured in the study. The objective was to determine genotypic differences among P.mungo varieties in terms of salt and drought stress and to determine factors(salt toxicity or osmotic stress due to PEG) inhibiting seed germination. The germination results revealed that the genotypes significantly differed for salt and drought stress. PU-19 appeared to be more tolerant to salt and drought stress comparable to var. Type-9. Both NaCl and PEG inhibited germination and seedling growth in both the varieties, but the effects of NaCl compared to PEG was less on germination and seedling growth. All varieties were able to germinate at all NaCl levels without significant decrease in germination, while a drastic decrease in germination was recorded at -6 and -8 bars of PEG. It was concluded that inhibition in germination at equivalent water potential of NaCl and PEG was mainly due to an osmotic effect rather than salt toxicity.

Key words: Salt toxicity, Osmotic stress, Seed germination, Seedling growth

PDF of full length paper is available online


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